DDR4/3/3L/LPDDR4/4X/3

芯动DDR4/3/3L/LPDDR4/4X/3 Combo IP可提供支持JEDEC标准、兼容SDRAM设备的一站式交钥匙解决方案，低功耗、高速率、小尺寸、时序优化。支持市场上所有的 JEDEC DDR4/3/LPDDR4/4X/3 SDRAM组件。PHY组件包含DDR专用功能和实用高性能I/O、关键时序同步模块 (TSM) 和低功耗/抖动DLL，可对任何SDRAM接口进行可编程细粒度控制。且PHY都预先组装了.lib、LEF和GDS，DDRn总线宽度可以从4位到80位或更多，易于集成，缩短客户设计周期。该方案包括Controller和PHY，支持DDR4/3/3L/LPDDR4/4X/3，可配置时序、驱动强度参数和各种SDRAM接口，灵活高效。

The INNOSILICON DDR IPTM Mixed-Signal DDR4/3/3L/LPDDR4/4X/3 Combo PHYs provide turnkey physical interface solutions for ICs requiring access to JEDEC compatible SDRAM devices. It is optimized for low power and high speed applications with robust timing and small silicon area. It supports all JEDEC DDR4/3/3L/LPDDR4/4X/3 SDRAM components in the market. The PHY components contain DDR specialized functional and utility I/Os, critical timing synchronization module (TSM) and a low power/jitter DLLs with programmable fine-grain control for any SDRAM interface.

Note that all INNOSILICON PHY is pre-assembled with.lib, LEF and GDS so that it is very easy to integrate the PHY with any existing SoC floor plan. DDRn bus width can be from 4 bit to 72 bit or more. INNOSILICON is happy to pre-assemble each PHY for our customer so that integration becomes extremely easy.

The combo PHY solution includes DDRn controller and PHY, supporting DDR4/3/3L/LPDDR4/4X/3. With configurable timing and driving strength parameters to interface to the wide variety of SDRAMs, the PHY is very flexible with advanced command capability to increase SDRAM operation efficiency.

KEY FEATURES:

Max data rate: 4266Mbps (LPDDR4/4X), 3200Mbps (DDR4), and 2133Mbps (DDR3/3L), 1600Mbps (LPDDR3)
x16/x32 data path interface extendable
1.2V/1.1V/1.5V JEDEC IO standard, support 1.5V SSTL, 1.2V POD_12 I/Os and 1.1V LVSTL I/Os
Optional limited swing to VDDQ/3 in LPDDR4 mode
Independent read and write timing adjustments with auto calibration
Programmable write post-amble (0.5 tCK or 1.5 tCK)
Support 0.6V VDDQL LPDDR4x IO operating mode
Supports point to point memory sub systems and multi-rank
PVT compensation and timing calibration for all corner reliability
At speed BIST, scan insertion, PAD and internal loopback modes
Various power-down modes for low power including self-refresh support
Low jitter with superior noise rejection
APB Port register access interface
Supports both wire-bond and flip- chip packaging
Support different DDRn type signal mapping for feasible PCB layout
Fully pre-assemble design, Drop-in hard macro to ease integration and speed time to market
Zero risk with robust ESD architecture
Maintains self-refresh I/O drive state during VDD power down
Extensive EDA tool support for various design automation flows
Optional CKE retention mode permits VDD and all non-essential I/Os to be powered down while retaining the external SDRAMs in self refresh mode
DFI3.1 compliant memory controller interface
Flexible pad ring configuration to adapt for various design and chip scenarios
Integration with other INNOSILICON interface IP
Takes full advantage of process power savings and speed capability
Best in class low noise design to ensure best timing margin and signal integrity
DFT functions to reduce test time and ensure high test coverage
Several programmable PHY operating modes through simple register interface
Per Bit De-skew to improve composite data eye during read cycles at high speed

INNOSILICON ADVANTAGES:

Fully customized solutions including Controller and PHY
Over 500,000 wafers shipped out with Innosilicon DDRn/LPDDRn IP
All major processes fully covered, such as 110nm, 55nm to 28nm, 22nm, 14nm, 12nm, 8nm, 7nm, 6nm, 5nm.
Full harden PHY proven by 100+ tapeouts
Simple integration with pre-assembled PHY
Low IO pin count
High performance
Test chip and FPGA integration services available

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